inchange semiconductor isc product specification isc websit e www.iscsemi.com isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 14N60 features drain current i d = 14a@ t c =25 drain source voltage- : v dss = 600v(min) low on resistance r ds(on) = 0.55 (max) international standard packages avalanche rated descrition switched-mode and resonant-mode power supplies dc-dc converters laser drivers ac and dc motor drives robotics and servo controls absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 600 v v gs gate-source voltage-continuous 30 v i d drain current-continuous 14 a i dm drain current-single plused 42 a p d power dissipation 112 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.1 /w r th j-a thermal resistance, junction to ambient 65 /w
inchange semiconductor isc product specification isc websit e www.iscsemi.com isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 14N60 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 600 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 3.0 5.5 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 7a 0.55 i gss gate-body leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 600v; v gs = 0 5 a v sd forward on-voltage i s = 14a; v gs = 0 1.5 v
|
